| PART |
Description |
Maker |
| W25X32A |
32M-BIT SERIAL FLASH MEMORY
|
Winbond
|
| W25X32VDAI W25X32VDAIZ W25X32VZPI W25X32VZPIZ W25X |
16M-BIT, 32M-BIT, AND 64M-BIT SERIAL FLASH MEMORY WITH 4KB SECTORS AND DUAL OUTPUT SPI
|
Winbond
http://
|
| MX25L3239E MX25L3239EM2I10G MX25L3239EMBI10G |
32M-BIT [x 1 / x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX25L3275EMI10G |
32M-BIT [x 1/x 2/x 4] CMOS MXSMIO? (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| MX25L3235EZNI10G MX25L3235EM2I10G MX25L3235EMI10G |
32M-BIT [x 1/x 2/x 4] CMOS MXSMIO (SERIAL MULTI I/O) FLASH MEMORY
|
Macronix International
|
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| W25Q32DW12 W25Q32DWSFIP W25Q32DWZEIG W25Q32DWZPIG |
1.8V 32M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
1.8V 32M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
|
Winbond
|
| W25Q32JVTCIQ W25Q32JVSFIQ-TR W25Q32JVSTIQ W25Q32JV |
3V 32M-BIT SERIAL FLASH MEMORY WITH DUAL, QUAD SPI
|
Winbond
|
| MBM29DL323BE-12TR MBM29DL324TE-12TR MBM29DL324BE-1 |
FLASH MEMORY 32M (4M x 8/2M x 16) BIT Dual Operation
Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation
|
Fujitsu Microelectronics
|
| MX29LA321MHTC-90G MX29LA321MLTI-90 |
32M-BIT SINGLE VOLTAGE 3V ONLY UNIFORM SECTOR FLASH MEMORY 2M X 16 FLASH 3V PROM, 90 ns, PDSO56
|
Macronix International Co., Ltd.
|
| NX26F041A-5V-R NX26F011A NX26F011A-3V-R NX26F011A- |
3 V, 1M-bit flash memory with 2-pin NXS interface
1M-BIT AND 4M-BIT SERIAL FLASH MEMORY WITH 2-PIN NXS INTERFACE
4 Mbit Uniform Sector, Serial Flash Memory
|
NexFlash
List of Unclassifed Manufacturers
ETC[ETC]
Electronic Theatre Controls, Inc.
|
| K5A3X40YTC K5A3240YBC-T855 K5A3240YTC-T855 K5A3240 |
Multi-Chip Package MEMORY 32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 4M(512Kx8/256Kx16) Full CMOS SRAM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
